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| SUU50N03-10P Vishay Siliconix N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) () 0.010 @ VGS = 10 V 0.014 @ VGS = 4.5 V ID (A)a 20 18 TO-251 D G and DRAIN-TAB GDS Top View Order Number: SUU50N03-10P S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25_C Maximum Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C PD TJ, Tstg TA = 25_C TA = 100_C ID IDM IS Symbol VDS VGS Limit 30 20 20 14 100 20 71b 8.3a --55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter t 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case Notes: a. Surface mounted on 1" x 1" FR4 Board, t 10 sec. b. See SOA curve for voltage derating. Document Number: 71296 S-01706--Rev. A, 14-Aug-00 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 15 40 1.75 Maximum 18 50 2.1 Unit _C/W 1 SUU50N03-10P Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = 20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current g IDSS VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 30 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Drain Source On State Resistancea VGS = 10 V, ID = 15 A, TJ = 125_C rDS( ) DS(on) VGS = 10 V, ID = 15 A, TJ = 175_C VGS = 4.5 V, ID = 15 A Forward Transconductancea gfs VDS = 15 V, ID = 15 A 20 0.011 50 0.0075 0.010 0.016 0.019 0.014 S Symbol Test Condition Min Typ Max Unit 30 V 1 2 100 1 50 150 A m m nA Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0.3 ID 20 A, VGEN = 10 V, Rg = 2.5 VDS = 15 V, VGS = 10 V, ID = 20 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 2710 500 250 55 10 9 16 90 33 20 30 135 60 40 ns 100 nC 6000 pF Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time IS ISM VSD trr IF = 100 A, VGS = 0 V IF = 20 A, di/dt = 100 A/ms 1.2 55 20 A 100 1.5 100 V ns Notes: a. Pulse test; pulse width 300 ms, duty cycle 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71296 S-01706--Rev. A, 14-Aug-00 SUU50N03-10P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 200 VGS = 10 thru 6 V 5V 120 100 Transfer Characteristics 160 I D -- Drain Current (A) 80 I D -- Drain Current (A) 60 80 4V 40 TC = 125_C 20 25_C --55_C 0 0.0 40 3V 0 0 2 4 6 8 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Transconductance 100 TC = --55_C g fs -- Transconductance (S) 25_C 60 125_C 40 r DS(on) -- On-Resistance ( ) 80 0.030 On-Resistance vs. Drain Current 0.025 0.020 0.015 VGS = 4.5 V VGS = 10 V 0.010 20 0.005 0 0 10 20 30 40 50 0.000 0 20 40 60 80 100 ID -- Drain Current (A) ID -- Drain Current (A) Capacitance 5000 10 Gate Charge 4000 C -- Capacitance (pF) Ciss 3000 V GS -- Gate-to-Source Voltage (V) 8 VDS = 15 V ID = 50 A 6 2000 4 1000 Coss Crss 0 6 12 18 24 30 2 0 0 0 10 20 30 40 50 VDS -- Drain-to-Source Voltage (V) Document Number: 71296 S-01706--Rev. A, 14-Aug-00 Qg -- Total Gate Charge (nC) www.vishay.com 3 SUU50N03-10P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V ID = 50 A r DS(on) -- On-Resistance () (Normalized) 1.6 I S -- Source Current (A) TJ = 150_C TJ = 25_C 10 100 Source-Drain Diode Forward Voltage 1.2 0.8 0.4 0.0 --50 1 --25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ -- Junction Temperature (_C) VSD -- Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Ambient Temperature 25 1000 Limited by rDS(on) 20 I D -- Drain Current (A) I D -- Drain Current (A) 100 10 ms 100 ms Safe Operating Area 15 10 1 ms 10 ms 100 ms 1s 10 1 5 0.1 TA = 25_C Single Pulse 10 s 100 s dc 0 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 TA -- Case Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 VDS -- Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 40_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 71296 S-01706--Rev. A, 14-Aug-00 4 |
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